| 摘要 |
PURPOSE:To make pattern formation effective even in a more general case where the resist film thickness is nonuniform, by giving the surface layer of a resist during development an energy beam as sub-exposure to cause selective energy deposition in the depth direction. CONSTITUTION:After a resist film is spread, the whole surface is exposed by a far- ultraviolet ray source 4, and a layer 5 hard to dissolve is formed. By an electron beam 6, a line pattern with a specified pitch is drawn on the upper part and the lower part of a step-difference, and the resist is subjected to developing treatment. At this time, a developing monitor recognizes that the development is finished up to a specified thickness of the resist film of the step-difference upper part, and make a sub-exposure 4' light source radiate. At the time point when the thicknesses of the resist film and the film hard to dissolve get out of the optimum conditions, sub- exposure is again performed. Thereby, a layer hard to dissolve can be formed on the surface of a pattern which is exposed and formed at the above time point and has excellent resolution and a shape. After that, even if developing is progressed as far as the optimum conditions are not maintained, the pattern deterioration of the the step-difference upper part due to excess-developing as well as that of the thick film resist of the step-difference lower part can be prevented. |
