发明名称 |
SEMICONDUCTOR DYNAMIC MEMORY DEVICE |
摘要 |
A semiconductor dynamic memory device includes a plurality of memories, row decoders for selecting the row of the memories, column decoders for selecting the column of memories, and sense amplifier circuits connected to the memories, respectively. The dynamic memory device further has a driving circuit for selectively activating some of the sense amplifier circuits in accordance with the content of a predetermined bit of row address data supplied to the row decoders. |
申请公布号 |
DE3379854(D1) |
申请公布日期 |
1989.06.15 |
申请号 |
DE19833379854 |
申请日期 |
1983.02.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJII, SYUSO 313 TOSHIBA-KOMUKAI-JUTAKU;SAITO, SHOZO;NATORI, KENJI;FURUYAMA, TOHRU |
分类号 |
G11C11/401;G11C5/02;G11C8/00;G11C11/407;G11C11/408;G11C11/4091;G11C11/4096;(IPC1-7):G11C11/24;G11C5/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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