| 摘要 |
PURPOSE:To obtain a sintered AlN material having high thermal conductivity and bonding strength to a metallized layer, enabling ready positioning of metallized pattern by the color and useful as a mounting substrate for semiconductor element, by using a composition composed of Y2O3, TiN and AlN at specific ratios. CONSTITUTION:Raw materials are compounded and mixed at ratios to attain a composition composed of 1-10wt.% of Y2O3, 0.1-15wt.% of TiN and the remaining part of AlN. The mixture is crushed, formed and calcined at 1,700-1,900 deg.C in vacuum or in a non-oxidizing gas atmosphere (e.g. N2). |
