| 摘要 |
A method for manufacturing a semiconductor device comprising at least a support body and a monocrystalline semiconductor body, in which both bodies are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), and at least the semiconductor body is then provided at the optically smooth surface with an electrically insulating layer with at least the electrically insulating layer on the semiconductor body being subjected to a bonding-activating operation, whereupon both bodies after their flat surfaces have been cleaned, are contacted with each other in a dust-free atmosphere in order to obtain a rigid mechanical connection, after which they are subjected to a heat treatment of at least 250 DEG C., whereupon the semiconductor body is etched to a thin layer having a thickness lying between 0.05 and 100 mu m. |
