| 摘要 |
PURPOSE:To hold a multilayer film structure well and to reduce loss in manufacture by manufacturing a pattern previously on a mask substrate, and then manufacturing a multilayered multilayer film reflection thereon. CONSTITUTION:A SiN film 2 is formed on a silicon substrate 1, coated with a resist 3, formed with an L & S pattern by an EB lithography apparatus, and the film 2 is dry etched by RIN with the resist 3 as a mask. Then, with the film 2 as a mask the substrate 1 is removed by etching with aqueous KOH solution, and 28 multilayer films 4 of Au and C are alternately deposited thereon in predetermined thickness by an EB depositing apparatus. Thus, a reflection type X-ray mask having small loss can be manufactured in manufacturing steps without damaging a multilayer film structure. |
