| 摘要 |
PURPOSE:To control the deviation from a stoichiometrical compsn. precisely and to pull up a titled single crystal, by bisecting the raw material melt in an LEC core at a partition wall having a small hole in the lower part and adding one of the constituting components of a compd. semiconductor only to one of the melts. CONSTITUTION:The inside of a pressure resistant vessel 1 is filled with pressurized dry gaseous nitrogen and the entire part of a crucible 2 is heated with a carbon heater 4 to melt the raw material. The molten raw material in a scum- free state flows into a crucible 13 through a fine hole 14, thereby growing a raw material melt 9 for growth. Layers 8, 11 of a liquid capsule agent are provided and a stopper 17 is opened to add Sb particles 23 which are one of the constituting elements of a compd. semiconductor, for example, GaSb only to the melt 9. As a single crystal 12 is grown by using a single crystal seed 7, the height of the melt 9 decreases and the atom % of the Sb in the residual melt tends to increase but a raw material melt 10 to be supplied to the outside is supplied, and eventually the compsn. of the melt 9 is maintained approximately constant. |
