| 摘要 |
PURPOSE:To shorter a writing time by providing a polycrystalline Si which becomes a high resistor on the top of the base region of a lateral bipolar load transistor TR, and respectively connecting both ends of the resistor to an emitter region and a collector region. CONSTITUTION:Assume that a P-N-P TRQ1, an N-P-N TRQ3 are turned ON and a P-N-P TRQ2, an N-P-N TRQ4 are turned OFF. When a current is fed from an emitter E5 so as to write, the TRQ2 and the TRQ4 which are OFF are turned ON. In this case, the potential of the resistor R2 is reduced, for example, to -0.9V. Then, when they are turned ON, the base b3 of the TRQ3 is decreased, and the TRQ2 is turned OFF. In this case, the collector C2 of the TRQ2 is raised to -0.2V. Thus, the potential of the base B1 of the TRQ1 tends to be raised from -0.9V to -0.2V. Here, since a high resistor R1 is inserted between the emitter E1 and the base B1 of the N-P-N TR, the base B1 is charged through the resistor, thereby writing. |
