发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the accuracy of patterning for wiring, etc., and to enhance reliability and yield by previously filling a contact hole with a wiring member, forming a wiring member filling layer, and forming a wiring member deposit layer of a predetermined pattern connected onto the wiring member filling layer by using a positive type resist. CONSTITUTION:The contact hole 29 is filled with the wiring member, such as aluminum polycrystalline silicon, etc. while using a resist film 26 as a mask under the state in which the resist film 26 is left, and the wiring member filling layer 30 is formed. It is preferable that the wiring member filling layer 30 is filled up to thickness approximately equal to the thickness of the insulating film 26. A wiring member deposit layer 31 is formed onto a resist film 28. A wiring member is deposited on the surface of the insulating film 26 and the whole surface of the wiring member filling layer 30, a positive type resist film of the predetermined pattern is placed on a section corresponding to the upper section of the wiring member filling layer 30 of the wiring member 32, and the wiring member deposit layer 32 of the predetermined pattern connected to the wiring member filling layer 30 is obtained through patterning.
申请公布号 JPS58218140(A) 申请公布日期 1983.12.19
申请号 JP19820100304 申请日期 1982.06.11
申请人 TOKYO SHIBAURA DENKI KK 发明人 MUROMACHI MASASHI
分类号 H01L21/3213;H01L21/306 主分类号 H01L21/3213
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