发明名称 |
Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement |
摘要 |
A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
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申请公布号 |
US4839307(A) |
申请公布日期 |
1989.06.13 |
申请号 |
US19870048616 |
申请日期 |
1987.05.11 |
申请人 |
OMRON TATEISI ELECTRONICS CO. |
发明人 |
IMANAKA, KOICHI;IMAMOTO, HIROSHI |
分类号 |
H01S5/223;H01S5/24;H01S5/30;H01S5/323 |
主分类号 |
H01S5/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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