| 摘要 |
PURPOSE:To obtain the waveguide having mode selectivity to respective polarized wave of TE and TM by using mixed crystals which are not incorporated with an impurity from the outside for a part of the superlattices of the semiconductor waveguide having the superlattice structure alternately laminated with different kinds of semiconductors. CONSTITUTION:This waveguide has a substrate 1 consisting of, for example, a GaAs single crystal, a clad layer 2 consisting of AlxGa1-xAs having the refractive index lower than the refractive index of the substrate 1, and the superlattice layer 3 consisting of 100 periods of GaAs80A and AlAs80A. The waveguide has a mixed crystal superlattice layer 4 which is converted the layer 3 to the mixed crystals by a method of not introducing the impurity to the waveguide and an SiO2 layer 5 deposited in order to form the mixed crystal superlattice 4 by converting the layer 3 to the mixed crystals. The formation of the semiconductor light guide of not only TE (Transverse Electric) guided wave and TM (Transverse Magnetic) leakage but also the TM guided wave and TE leakage is possible in this way. |
