发明名称 CONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To absorb even a shearing strain as a deformation within an elastic range of a supereleastic body material and to obtain a stable electrical connection by a method wherein uneven parts are formed on a contact face and a frictional force between contact faces is made large to prevent a slip on the contact face. CONSTITUTION:A superelastic body material 6 of a bump structure formed, by a plating operation, on an electrode 4 of a semiconductor device 1 is etched selectively by using a solution of iron chloride; recessed parts 7 are formed. The superelastic body material is aligned with an electrode 4 of a wiring board 2p after that, a pressurization force is exerted by using a resin 5 whose contraction rate at hardening is large. Since the recessed parts 7 have been formed in parts where the superelastic body material 6 comes into contact with the electrode 4 of the wiring board 2, a frictional force in the parts becomes large; even when a shearing strain is caused by a difference in a coefficient of thermal expansion between the semiconductor device 1 and the wiring board 2, a slip is not caused on this face. Thereby, the shearing strain can be absorbed by a deformation within an elastic range of the superelastic body material 6; it is possible to obtain a stable electrical connection.
申请公布号 JPH02206142(A) 申请公布日期 1990.08.15
申请号 JP19890027303 申请日期 1989.02.06
申请人 NIPPON STEEL CORP;OKI ELECTRIC IND CO LTD 发明人 ONO TAKAHIDE;OTSUKA HIROAKI;OZEKI YOSHIO;WATANABE KEISUKE;KANAMORI TAKASHI;IGUCHI YASUO
分类号 H01L21/60 主分类号 H01L21/60
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