| 摘要 |
PURPOSE:To obtain the title semiconductor porcelain substance having improved dielectric constant and insulation resistivity by a method wherein a composition, consisting of the specific quantity of the specific quantity of bismuth oxide and the specific quantity of one or two or more kinds of copper oxide, cesium carbonate, cesium hydroxide, cesium oxide, dicesium trioxide, cesium peroxide, is diffused in the crystal grain boundary of a semiconductor porcelain, and a dielectric layer is formed in the crystal grain boundary. CONSTITUTION:The mixture, which is diffusing substance, is formed into the composition consisting of bismuth oxide Bi2O3 of 20-80molar%, copper oxide CuO of 10-50molar%, cesium carbonate Cs2CO3, cesium hydroxide CsOH, cesium oxide Cs2O, dicesium trioxide Cs2O3 and cesium peroxide Cs2O2. When the mixture of the above-mentioned composition is used, the dielectric constant can be improved by 1.5-1.9times and the insulation resistivity can be improved by 1-3 figures when compared with the case wherein a bismuth oxide single unit or a copper oxide single unit is used. |
