MANUFACTURE OF LUMINOUS DISPLAY

摘要

PURPOSE:To enable the formation of a required light emitting region independently of a kind of a base substrate by a method wherein a doping material is continuously switched so as to make a semiconductor crystal layer a reverse conductivity type during a growth treating process of a seed single crystal controlled in a face orientation. CONSTITUTION:A seed single crystal 3 of Si or Ge uniform in orientation is formed on a SiO2 non-nucleus formation face 2 and GaP is made to grow on Si or Ge through the intermediary of GaAs by means of an MOCVD method. By this process, a GaAs single crystal 4 grows selectively and epitaxially only on a single crystal seed crystal of Si or Ge. Moreover, PH3 is introduced to form a p-n junction of GaP. And, a heat treatment is performed in a PCl3 atmosphere, and a single crystal island 5 is made to grow making use of an MOCVD method. When the p-type GaP crystal 5 grows to be a required size, a doping gas is switched from zinc diethyl to hydrogenated selenium to make an n-type GaP crystal 6 grow. A color image display can be constituted by arranging p-n junction type LEDs which are to be accomplished later in an LED array.