| 摘要 |
A transistor with permeable base, of the SMST type, comprises a collector-forming monocrystalline substrate 1 and a very thin strip 2, preferably of metal silicide or of metal, forming a base proud on the substrate. In order to avoid epitaxy to form an emitter area, the transistor according to the invention comprises an SiO2 insulating layer 3, 4 underlying and to the side of the base strip 2 and an emitter-forming polycrystalline layer 6 covering the insulating layer and at least one part 5 of the main face 11 of the substrate to the side of the base strip. A Schottky barrier is thus produced in the region of the main face, between the base strip and the collector substrate. In particular, the base strip 2, the insulating layer 3, 4 and the polycrystalline layer 6 are obtained by vapour phase chemical deposition. <IMAGE>
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