| 摘要 |
PURPOSE:To prevent wiring from being etched due to side-etching of a barrier metal at the time of etching the barrier metal, by arranging a ring type trench outside the wiring aperture part of a lower layer barrier metal, and arranging an upper layer barrier metal so as to fill the trench. CONSTITUTION:The subject device has a structure wherein a metalplated electrode 7 is connected with a wiring 2 arranged on a substrate 1, via two layers 4, 11 of barrier metal. A ring type trench 4a is arranged outside a wiring aperture part 3a of the lower layer barrier metal 4, and the upper layer barrier metal 11 is arranged so as to fill the trench 4a. For example, the lower layer barrier metal 4 of titanium is formed, the barrier metal 4 is subjected to etching in the form of a ring from the wiring aperture part 3a of a cover film 3 toward outside, and the ring type trench 4a is formed. Then the upper layer barrier metal 11 of palladium is formed, and the outer part 10 from the trench 4a is etched. After a resist film 6 is subjected to patterning, and an Au-plated electrode 7 is formed, the resist film 6 is exfoliated, and the barrier metal 4 exposed on the surface is etched. |
