| 摘要 |
The invention relates to a method for making fine, deep dielectric isolation.
<??>The method involves forming a first layer (16) of material on the silicon body (10, 12, 14) over a first set of alternately designated device regions. A conformal coating (18) is deposited over the first layer (16) and on the silicon body (10, 12, 14) included in a second set of alternately designated device regions and the designated isolation regions. The thickness of conformal coating (18) is chosen to be substantially the width of the planned isolation between device regions. A second layer (20) is then deposited over conformal coating (18). First layer (16) and conformal coating (18) are composed of different materials. The topmost surface comprising of second layer (20) and conformal coating (18) is planarized by removing partially second layer (20) and conformal coating (18) from first layer (16) wherein the second set of alternately designated device regions in silicon body (10, 12, 14) are covered by conformal coating (18) and second layer (20) with portions of the conformal coating separating the covers for the first and second set of device regions. The portions of conformal coating (18) separating the covers are removed down to the silicon body (14) over the designated isolation regions. A groove (22) is then etched in the silicon body (10, 12, 14) using the covers as the etch mask. The groove (22) is etched to the desired depth of the dielectric isolation in the designated isolation regions and then is filled typically by thermal oxidation. |
