| 摘要 |
PURPOSE:To form a minute film on a substrate made of easily denaturizable superfine powder and also to simplify a film forming process by generating superfine powder with arc plasma having flame imparted with directivity in a vacuum chamber and intactly carrying it on the substrate and sintering it thereon. CONSTITUTION:The nozzle 7 of a water-cooled cathode 8 is slightly titled for an anode 10 and gaseous Ar jet which is fed through an introduction pipe 6 and the nozzle 7 and allowed to collide against the anode 10 is imparted with directivity and substrate 11 made of an Si plate is arranged to the front part thereof and Ar pressure in a vacuum chamber 1 is held at prescribed value and arc discharge is generated between the cathode 8 and the anode 10. The above-mentioned discharge is made to a plasma jet shape by action of the nozzle 7 and an Si block 18 placed on the anode 10 is efficiently dissolved thereby. Gaseous NH3 is introduced through an introduction pipe 13 and superfine Si powder is generated. Superfine Si powder is carried in accompany with the flame 19 of the plasma jet and deposited on the substrate 11. It is heated by the flame 19 and a heater 12 and both nitrification reaction and sintering reaction are advanced and thereby a silicon nitride film can be formed. |
