Semiconductor device having a composite insulating interlayer.

摘要

A semiconductor device has a first interconnection pattern (22) formed on a semiconductor substrate (21), and a second interconnection pattern (25) located in and over a through hole (A) formed at a composite insulating layer structure (23, 24). The composite insulating layer structure is constituted by a first inorganic insulating film (23) and an organic insulating film (24). At a peripheral region of the second interconnection pattern (25), the organic insulating film (24) is partially eliminated to form an eliminated portion (B). The semiconductor device also has a second inorganic insulating film (25) which is formed over the organic insulating film (24) and is directly formed on the first inorganic insulating film (23), via the eliminated portion (B).