| 摘要 |
<p>In a photosensitive matrix whose structure uses, at each photosensitive point, a photosensitive element (p-i-n photodiode) in series with a capacitance between a row conductor (12) and a column conductor (22), it is proposed here to use a simplified photosensitive element, one outermost semiconducting layer of which is eliminated; for example, the n layer of a p-i-n photodiode, or the n layer of a phototransistor with five layers of n-i-p-i-n type is eliminated. The dielectric (20) of the capacitance then comes directly into contact with an intrinsic semiconducting layer (16) in which electrons accumulate, reconstituting the equivalent of a doped layer of n type. Manufacture is thereby simplified and photon losses are reduced within the semiconductor layer which previously had to be crossed by the luminous radiation. <IMAGE></p> |
