发明名称 |
Method for producing a semiconductor integrated circuit having an improved isolation structure |
摘要 |
A compound semiconductor (e.g., GaAs) IC device structure includes: a compound semiconductor substrate having a semi-insulating compound surface region; an active element laminated layer formed on the surface region; an isolation region of a semi-insulating (intrinsic) compound semiconductor which is filled in a groove extending into the surface region through the laminated layer; and active elements formed in regions of the laminated layer, isolated by the filled groove.
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申请公布号 |
US4837178(A) |
申请公布日期 |
1989.06.06 |
申请号 |
US19870094091 |
申请日期 |
1987.09.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
OHSHIMA, TOSHIO;YOKOYAMA, NAOKI |
分类号 |
H01L21/20;H01L21/263;H01L21/76;H01L21/8222;H01L21/8252;H01L27/06;H01L27/082;H01L29/205;H01L29/737;H01L29/812 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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