发明名称 Heating system for reaction chamber of chemical vapor deposition equipment
摘要 A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber on a susceptor which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly, a lower heating element assembly and a heat concentrator mechanism which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processig cycle.
申请公布号 US4836138(A) 申请公布日期 1989.06.06
申请号 US19870063409 申请日期 1987.06.18
申请人 EPSILON TECHNOLOGY, INC. 发明人 ROBINSON, MCDONALD;OZIAS, ALBERT E.
分类号 C23C16/46;C23C16/48;H01L21/205 主分类号 C23C16/46
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