HYBRID INTEGRATED CIRCUIT OF BIPOLAR TRANSISTOR AND MOS TRANSISTOR AND ITS MANUFACTURE

摘要

PURPOSE: To reduce the manufacturing process and enable formation at a low cost, by simultaneously forming in parallel a base and a gate, and an emitter and a source/drain contact, in main elements of a bipolar transistor and an MOS device. CONSTITUTION: An NPN transistor, a resistor, a PMOSFET and an NMOSFET are formed in a region 114, a region 116, a region 118 and a region 120, respectively. Masking of gate/base/collector and etching are executed, and a base contact 140, a collector contact 142, a resistor 144, and MOSFET gate electrodes 146 and 148 are defined. Thereby a source/drain contact constitution body is isolated, and an individual self-alignment source and an individual drain contact are formed.