| 摘要 |
A method of producing a high density and high strength silicon carbide member for a heat treatment furnace to be used in the manufacture of a semiconductor device. In this method, SiC powder, carbon powder, deflocculating agent and water are mixed to form a slip. Then the slip is formed into a desired shape, cured under a nonoxidizing atmosphere, and removed of any impurity contained in the shaped body. Finally, the shaped body is immersed in a molten silicon to convert the carbon in the shaped body into silicon carbide.
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