| 摘要 |
PURPOSE:To execute a high-speed switching action with a small-sized and, simultaneously, easy constitution by supplying a current through a first FET to the collector of a first output transistor when the first output transistor is in a low level condition, and clamping between the collector and base of the output transistor in a prescribed potential. CONSTITUTION:When an input signal is changed to the low level condition, the output terminal of an inverter circuit I3 is changed from the low level condition to a high level condition, and an output transistor Q6 and an MOS type FET (NMOS) N5 of N-channels are changed from a non-conductive condition to a conductive condition. NMOSs N3 and N4 are changed from the conductive condition to the non-conductive condition, the base charge of an output transistor Q7 is extracted by an NMOS N5, and the output transistor Q7 is made into the non-conductive condition. At such a time, since the output transistor Q7 is not made into a deep oversaturated condition, the output transistor Q7 can be changed from the conductive condition to the non-conductive condition at a high speed. Consequently, the switching action can be executed at a high speed. |
