| 摘要 |
The invention relates to a Schottky contact produced on an indium phosphide substrate 3, including: - a metal layer 1 consisting of a gold layer 4, a platinum layer 5, a titanium layer 6 and a platinum layer 7; - a constrained intermediate layer 2 consisting of GaInP; - and a substrate 3 of InP. The invention is applicable to the production of Schottky diodes and the production of field-effect transistors for large powers, the gate being produced by means of a contact according to the invention. <IMAGE>
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