发明名称 CONTACT MATERIAL FOR VACUUM BULB AND ITS MANUFACTURE
摘要 PURPOSE:To improve the anti-deposition property extensively by applying an adequate processing rate of plastic process and an adequate heat treatment to designate the crystalline grading in a high conductive material. CONSTITUTION:The crystalline grading of a high conductive material is made to NO.3 to 13 of ASTM by applying an adequate processing rate of plastic process and an adequate heat treatment. In case of Cu-Cr material, a powder formation is obtained by pressure-forming a specific grading of Cr. Then, the powder formation is sintered temporarily in a hydrogen ambiance or in a vacuum at a specific temperature, to obtain a temporarily sintered substance. After that, Cu is molten in the resedual pores of the temporarily sintered substance to obtain a Cu-Cr alloy. Then, the 50% processing rate of process is applied in a cold rolling, and a heat treatment is applied in a vacuum at a specific temperature for a specific time. The contact material manufactured in such a process has the crystalline grading in the conductive material of the level NO.8 of ASTM, and the anti-deposition property is improved extensively.
申请公布号 JPH01140526(A) 申请公布日期 1989.06.01
申请号 JP19870296057 申请日期 1987.11.26
申请人 TOSHIBA CORP 发明人 SEKI KEISEI;OKUTOMI ISAO
分类号 H01H33/66;H01H1/02 主分类号 H01H33/66
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