SOLID STATE IMAGE SENSOR

摘要

A solid state image sensor comprising in combination a semiconductor substrate (11) having charge transfer functions and a photoconductive film (19). The difference in a voltage applied to the photoconductive film and the magnitude difference in the area of the picture elements between first and second fields (A, B) subjected to an interlace scanning, that are created unavoidably during the fabricating process and the latter difference becomes more significant the smaller the image size, can be offset by varying the voltage applied to the photoconductive film corresponding to the first and second fields, thereby preventing the occurrence of flicker.