发明名称 MANUFACTURE OF IMAGE SENSOR
摘要 <p>PURPOSE:To form a sensor having a photoelectric converter without losing its strength on a substrate having 0.2mm or less of thickness by adhering a second substrate on a first substrate having sufficient physical strength made of a single unit and a third substrate on the second substrate, and then exfoliating the first substrate with solvent. CONSTITUTION:A thin light transmissible substrate 7 is adhered through a soluble adhesive layer 6 on a first thick substrate 1, and a semiconductor layer 2 having optical sensitivity and a shielding electric conductor 3 are laminated thereon. Then, a light transmissible third substrate 9 is adhered through a solvent resistant adhesive layer 8 having light transmissibility, the layer 6 is then removed with solvent, and the substrate 1 is removed, thereby forming a photoelectric converter. In this case, a reading light 5 is transmitted through the substrate 9, the layer 8 and the substrate 7 to an original 4, and its reflected light 5 is introduced to the layer 2 to be photoelectrically converted. Thus, a complete contact type image sensor element formed with the photoelectric converter can be formed on the substrate 7 having 200mum or less of thickness.</p>
申请公布号 JPH01140776(A) 申请公布日期 1989.06.01
申请号 JP19870300589 申请日期 1987.11.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUKADA TAKESHI;SAKAMA MITSUNORI;AMACHI NOBUMITSU;SAKAMOTO NAOYA;KODAMA MITSUFUMI;YAMAZAKI SHUNPEI
分类号 H01L27/146;H01L25/04;H01L31/02;H01L31/0232;H01L31/0248;H04N5/335 主分类号 H01L27/146
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