| 摘要 |
A method and apparatus for detecting infrared radiation is disclosed. The apparatus comprises a substrate (12) having readout and signal processing circuits (14) integrated therein. The substrate (12) is formed from a material selected from the group consisting of silicon, gallium arsenide, or germanium. A first semiconductor layer (28) is grown on the substrate (12) from a material selected from the group consisting of mercury-cadmium-telluride, mercury-zinc-telluride, mercury-cadmium-selenide, mercury-zinc-selenide, mercury-cadmium-sulfide, mercury-zinc-sulfide, lead-tin-telluride, lead-tin-selenide, lead-tin-sulfide, indium-arsenide-antimonide, gallium-indium-antimonide, or gallium-antimonide-arsenide. A second semiconductor layer (30) is then grown on the first semiconductor layer (28). |
