发明名称 |
Method of making high dielectric constant insulators and capacitors using same. |
摘要 |
<p>An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400°C or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.</p> |
申请公布号 |
EP0096773(A2) |
申请公布日期 |
1983.12.28 |
申请号 |
EP19830105175 |
申请日期 |
1983.05.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSIEH, NING;IRENE, EUGENE ARTHUR;ISHAQ, MOUSA HANNA;ROBERTS, STANLEY |
分类号 |
H01L21/822;H01L27/04;H01L29/94;C01B33/12;B05D5/12;C01B33/113;H01B3/02;H01G2/12;H01G4/06;H01G4/08;H01G4/10;H01L21/314;H01L21/316;(IPC1-7):01B3/02;01G4/08;01L21/314 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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