发明名称 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable high density structure and high speed operation of a chip element, by bonding a semiconductor chip of arbitrary shape on which circuits elements are formed to a lower semiconductor chip region, and connecting circuit elements in the lower semiconductor chip region and circuit elements on the upper semiconductor chip by using electrode, via a chip side surface. CONSTITUTION:When the respective resistors R1-R3 of the respective IC chips 104-106 of a hybrid IC are made to correspond with the respective resistors R1-R3 of the respective IC chip 104-106, and each pad or the like is connected via side surface wirings 108, these become equivalent to each other. Further, by bonding the respective IC chips 104-106, and integrating them in a unified body, from technological concept viewpoint, an IC chip composed of three-layers can be formed, thereby enabling high density structure and high speed operation of a chip element.
申请公布号 JPH01140652(A) 申请公布日期 1989.06.01
申请号 JP19870300645 申请日期 1987.11.26
申请人 SHARP CORP 发明人 MATSUNAMI MITSUO
分类号 H01L25/18;H01L23/52;H01L25/065;H01L25/07;H01L27/00 主分类号 H01L25/18
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