| 摘要 |
PURPOSE:To increase resistance to alpha-ray, by enlarging the spread of a source diffusion layer under a gate electrode as compared with a drain diffusion layer, and increase the data storing capability. CONSTITUTION:The gate 5 of an N1-MOSFET for driving in a memory cell is previously extended far toward the source 6 side. A source diffusion layer 9 under a gate 5 is formed so wide that the interval between drain diffusion layers becomes equal to the usual interval. Threrefore, as to the NMOS for driving in an SRAM memory, the overlapping part of the gate 5 and the source 6, 7 increses, so that the capacitance between the gate 5 and the source 6, 7 increases, and data storing characteristics are improved, thereby preventing the soft error caused by alpha-ray. |
