| 摘要 |
The pn-junction of a photodiode (20) is reduced in area to minimize the capacitance associated with the junction and increase the diode impedance. The reduction in junction area, and also the junction capacitance, is accomplished by subdividing the junction into a plurality of smaller junctions, or subjunctions (22a, 22b). The total area of the subjunctions is less than the area of a unitary, continuous area junction required for a corresponding desired optical area. The shape of each subjunction and the spacing between adjacent subjunctions is selected such that the lateral collection region around the periphery of each of the subjunctions overlap one another yielding an effective optical area of approximately the same size as a device having a single unitary, larger junction. Each of the plurality of subjunctions may be conductively coupled one to another by a layer of metallization (52) which is deposited such that it contacts each of the subjunctions. Each of the subjunctions may, alternatively, be conductively coupled one to another by being physically in contact. |
