| 摘要 |
PURPOSE:To easily and accurately detect the etching end point of organic layer by measuring changes of mass spectrum intensity of C<+> on the occasion of etching an organic layer with a dry etching apparatus. CONSTITUTION:After forming protruded areas and recesses with an oxide film 2 on an Si substrate 1, the Al film 4 is deposited thereon and an organic layer 5 is applied on the film 4 in order to make flat the stepped parts. Next, a spacer film 6 is formed, a photo resist 7 is coated on the film 6, followed by patterning of said resist 7. The film 6 is then etched with the resist 7 used as the mask and the layer 5 is then etched with the film 6 used as the mask with a dry etching apparatus. At this time, change of mass spectrum intensity of C<+>(m/e=12) is measured and the timing where such change exceeds the specified value is considered as the etching end point. Thereby, the etching end point of layer 5 can be detected accurately. |
