Semiconductor memory device having dRAM cells.

摘要

Data of "0" and "1" are input to input pad (10) which is provided for each dRAM chip. The data is input to two data input buffers (14a, 14b) via protection circuit 12. Each of data input buffers (14a, 14b) senses the level of input data, converts the sensed level to the MOS level and outputs the MOS level data. Data input buffers (14a, 14b) are respectively supplied with control signals ( phi a, phi b) for determining the sense-timings thereof. The phases of control signals ( phi a, phi b) are shifted from each other. Selection circuit (16) selects an output of one of data input buffers (14a, 14b) in synchronism with control signals ( phi a, phi b) and supply the selected output to a corresponding one of write data line (18). Since two data input buffers are used, each data input buffer may operate to sense every other input data and each of control signals ( phi a, phi b) is set to have a pulse occurring in every two cycles of the input data.