| 摘要 |
<p>PURPOSE:To prevent interruption of crystal growing operation by providing a reaction furnace for growing crystal on a substrate, a thermal cracking furnace for solidifying an unreacted gaseous raw material, a collection means of the solid component and an adsorption means of the gaseous raw material and providing a by-pass to the collection means from the furnace. CONSTITUTION:A gaseous raw material such as AsH3 is introduced through a gas feed port 3 and crystal is grown on a semiconductor substrate 11 and the unreacted gaseous raw material discharged from a reaction furnace 1 is introduced into a thermal cracking furnace 17 and AsH3 is thermally decomposed into As and H2 and then As of a solid component is collected in a cyclone 19, a membrane filter 21 and a depth-type filter 23 and AsH3 adsorbed at a chemical trap 25 and the exhaust is discharged to the outside. In this case, when both filters 21, 23 are clogged, this is detected by a pressure gage 35 and a valve 31 is opened and a valve 33 is closed by a controlling means 36 and gas is by-passed and replacement of both filters 21, 23 is performed in the meantime and interruption of operation is prevented.</p> |
