| 摘要 |
<p>PURPOSE:To provide the active matrix type display device capable of decreasing the differences in level in mid-way of wirings and consequently having a wiring structure which hardly generates disconnection. CONSTITUTION:This active matrix type display device is formed with plural pixels and plural thin-film transistors (TFTs) 3 for supplying video signals by switching these pixels in a matrix form on a glass substrate 1 and has gate wirings 6 and drain wirings 10 connecting the pixels and the TFTs 3. Glass layers 13, 14 contg. boron are partially formed by an SOG method on the glass substrate 1 below the gate wirings 6 and polysilicon layers are formed to cover these glass layers 13, 14. The parts on the glass layers 13, 14 are the (p) type polysilicon layers 16, 17 and the parts exclusive of the glass layers 13, 14 are the(n)type polysilicon layers 15, 15. As a result, depletion layers by p-n junctions are formed on both sides of the glass layers 13, 14 and the p-n junctions are formed in the parts where the polysilicon layers on both sides thereof are required to be electrically insulated in mid-way of the polysilicon layers below the wirings 6.</p> |
