| 摘要 |
<p>PURPOSE:To eliminate the inconveniences due to exposure of the opposing faces at a light emitting part and a emitted light detecting part. CONSTITUTION:An n-AlGaAs layer 2, a GaAs layer 3, a p-AlGaAs layer 4, and a p-GaAs layer 5 are formed sequentially on a GaAs substrate 1. A p-side electrode 6 for light emitting part and a p-side electrode 7 for light detecting part are disposed, while spaced apart from each other, on the p-GaAs layer 5. An isolating part 8 is formed between the electrodes 6 and 7. In other words, a light emitting part 9 having pn junction structure is formed on the Gaps substrate 1 and an emitted light detecting part 10 having pn junction structure for detecting the intensity of light emitted from the light emitting part 9 is also formed on the GaAs substrate 1 while being spaced apart from the light emitting part 9. Furthermore, the opposing faces of the light emitting part 9 and the light detecting part 10 are inclined and applied with an anti-reflection film 11 and a protective film 12.</p> |
