| 摘要 |
<p>PURPOSE:To provide a spin polarization electron beam device of high polarization degree. CONSTITUTION:In a spin polarization electron beam source device which takes out the electrons 14 being excited by applying light 12 to a semiconductor 11 to outside of the semiconductor by the electric field applied from outside, a p-type germanium semiconductor or the like symmetrical after reversal is used for the semiconductor 11. Thereby, Dyakonov-Perel effect does not work, and the process of mitigating spin in crystals is suppressed, and electron beam of high polarization degree can be taken out.</p> |
