摘要 |
<p>A DRAM device includes bit lines (BL1) formed on an interlayer insulation (15) film which covers gate electrodes (WL3, WL4) on an insulation film (12, 13) on a semiconductor substrate (11). Each bit line is in contact with the corresponding source region formed in the substrate through an opening (16) in the insulation films. Another insulation film (18) is formed so as to cover the bit lines. A storage electrode (20a) is formed on the insulation film covering the bit line, and is in contact with a drain region (14D) in the substrate through another opening (20A) in the insulation films. The bit line has a vertical layer level lower than that of the storage electrode. The storage electrode is covered with a dielectric film (21), which is covered with an opposed electrode (22).</p> |