| 摘要 |
PURPOSE:To contrive to enhance resolution of the solid-state image pick-up device by a method wherein a transparently insulating film is provided in a convex lens type on the surface of the pedestal type optoelectric conversion part. CONSTITUTION:An SiO2 film 5, an Si3N4 film 6 are stacked on a P type Si substrate 1, a resist mask 7 is applied, and the films 6, 5 and the substrate 1 are etched in order. Then, wet oxidation 2 is performed to remove the films 6, 5. After then, P ions are implanted also on the substrate 1 of the photo acceptance part to form an N type layer 3 at source, drain forming time the same with the usual manufacturing process of solid-state image sensing device. Then, PSG 4 having P concentration of the degree of 8mol% is adhered to be annealed, and after the prescribed window is opened, it is heat treated in O2+PH3 gas, and the film 4 is reflowed to form the top part of the N type layer 3 in the convex type. After then, Al wiring is performed to the part other than the photo acceptance part to complete the solid-state image sensing device. Incident light upon the photo acceptance part is converged to the P-N junction part according to convex lens type PSG 4, and optoelectric transducing efficiency rises to enhance resolution. Resolution can be controlled according to regulation of etching depth of the substrate and the reflowing condition. |
