发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PURPOSE:To enhance the luminous output of the title element by a method wherein light of strong intensity light emitted from the light emitting layer located directly under a surface electrode is reflected by a light reflection surface of a recessed and spherical shape, and the light is led out from a surface other than the part of the surface electrode. CONSTITUTION:Of the rear surface of a light emitting diode, a region symmetrical with respect to a light emitting layer located directly under the electrode part 6 formed on the surface is formed in a recessed and spherical surface 8. As a result, the light of strong intensity emitted from the light emitting layer 3 located directly under a surface electrode 6 is reflected by the above- mentioned surface 8, and is taken out from a part other than the surface electrode 6. Accordingly, luminous output can be enhanced.
申请公布号 JPH01137679(A) 申请公布日期 1989.05.30
申请号 JP19870296925 申请日期 1987.11.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAWA KAZUHIRO;MATSUDA TOSHIO
分类号 H01L33/10;H01L33/20;H01L33/30;H01L33/40 主分类号 H01L33/10
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