发明名称 |
METHOD OF TRANSCRIPTING PATTERN ON TO SUBSTRATE MATERIAL BY REACTIVE ION ETCHING |
摘要 |
PURPOSE: To form a pattern on a substrate by selectively performing reactive ion etching of a substrate such as organic polymer and silicon by using improved etch barrier material. CONSTITUTION: A layer 12 of barrier material having resistance to reactive ion etching is spread on a silicon substrate 10. A resist layer 14 is stuck on the barrier layer 12. The resist layer 14 is exposed in a pattern shape with radioactive rays, and the barrier layer 12 is eliminated after the exposed resist layer 14 is eliminated. A desired trench 18 is formed by performing reactive ion etching of the substrate 10. The barrier layer 12 acts as a mask of the substrate 10 of the lower side which is not exposed. Thereby, a pattern is formed on the substrate 10.
|
申请公布号 |
JPH01137635(A) |
申请公布日期 |
1989.05.30 |
申请号 |
JP19880233844 |
申请日期 |
1988.09.20 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
BURAIAN HENRII DEISHIRETSUTSU;RICHIYAADO DEIIN KAPURAN;HAABANZU SUINGU SEISHIDEBU;KURICHINA GANJII SEISHIDEBU;SUUZAN AN SAANSHIEISU |
分类号 |
H01L21/302;G03F7/09;H01B13/00;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|