发明名称 METHOD OF TRANSCRIPTING PATTERN ON TO SUBSTRATE MATERIAL BY REACTIVE ION ETCHING
摘要 PURPOSE: To form a pattern on a substrate by selectively performing reactive ion etching of a substrate such as organic polymer and silicon by using improved etch barrier material. CONSTITUTION: A layer 12 of barrier material having resistance to reactive ion etching is spread on a silicon substrate 10. A resist layer 14 is stuck on the barrier layer 12. The resist layer 14 is exposed in a pattern shape with radioactive rays, and the barrier layer 12 is eliminated after the exposed resist layer 14 is eliminated. A desired trench 18 is formed by performing reactive ion etching of the substrate 10. The barrier layer 12 acts as a mask of the substrate 10 of the lower side which is not exposed. Thereby, a pattern is formed on the substrate 10.
申请公布号 JPH01137635(A) 申请公布日期 1989.05.30
申请号 JP19880233844 申请日期 1988.09.20
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 BURAIAN HENRII DEISHIRETSUTSU;RICHIYAADO DEIIN KAPURAN;HAABANZU SUINGU SEISHIDEBU;KURICHINA GANJII SEISHIDEBU;SUUZAN AN SAANSHIEISU
分类号 H01L21/302;G03F7/09;H01B13/00;H01L21/3065 主分类号 H01L21/302
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