| 摘要 |
A monolithic semiconductor device and method of manufacturing same having improved high voltage performance. When the device is in wafer form, a metallization structure is formed over scribe zones which are disposed along the scribe lines which define the edge of each device. The scribe zones are normally not covered with oxide during conventional semiconductor fabrication so that an ohmic contact is formed with semiconductor body. The metal structure includes a peripheral section which extend around the active region of each device and extension sections which extend across the scribe lines and interconnect the peripheral sections. The metal structure clamps the voltage at the edge of each device, both prior and subsequent to wafer breaking, which prevents as depletion region created by a reverse-biased junction from extending to the edge of the device under high voltage conditions. As a result, high voltage performance is improved.
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