发明名称 |
Process for the passivation of crystal defects |
摘要 |
A process for the passivation of crystal defects or grain boundaries or internal grain defects or surfaces in an electrically conductive material in a plasma, where the passivation is carried out by the influence of suitable ions on the electrically conductive material to facilitate a shorter process time and lower stress on the electrically conductive material. A high-frequency gas discharge plasma is acted upon by a superimposed d.c. voltage which serves to accelerate the ions, suitable to carry out the passivation, towards the electrically conductive material.
|
申请公布号 |
US4835006(A) |
申请公布日期 |
1989.05.30 |
申请号 |
US19870107442 |
申请日期 |
1987.10.13 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
GRASSER, HEINRICH;MUENZER, ADOLF |
分类号 |
B01J19/08;C30B31/22;C30B33/00;C30B33/04;H01L21/30;H01L31/18 |
主分类号 |
B01J19/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|