发明名称 FORMATION FOR ELEMENT SURFACE PROTECTIVE FILM
摘要 <p>PURPOSE:To control a coating amount by coating in advance the surface of a semiconductor element with a volatile solvent having smaller surface tension than that of the surface of the element and solubility for a film coating agent, and coating it with the agent, and eliminating the mixture of the agent and the solvent. CONSTITUTION:A volatile solvent 13 is dropped by a coating unit 11 to the surface of a semiconductor element 15. The solvent 13 has smaller surface tension than that of the surface of the element 15, such as approx. 18-22dyne/ cm, and excellent solubility for a film coating agent 14. The agent 14 is dropped by a coating unit 12 at the moment that the solvent 13 is moistened on a whole surface. The agent 14 is extended on the whole surface by the compatibility with the solvent 13 thereby to form a uniform thin film layer. When the solvent 13 is volatilized and the agent 14 is cured, the element surface protective film 18 of the thin film is formed. Thus, the mixture of the agent 14 and the solvent 13 is eliminated, and a coating amount is controlled.</p>
申请公布号 JPH01137639(A) 申请公布日期 1989.05.30
申请号 JP19870296413 申请日期 1987.11.25
申请人 OKI ELECTRIC IND CO LTD 发明人 NANBU MASATAKE;TAKEI SHINJI
分类号 H01L21/56;H01L23/29;H01L23/31 主分类号 H01L21/56
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