| 摘要 |
PURPOSE:To grow a growth layer such as an active layer through one-time continuous epitaxial process while preventing the thermal degradation of the active layer by forming first and second recessed sections in mutually different specific depth to the surface of an insulating semiconductor substrate, successively laminating a reflective layer, the active layer, a first clad layer and a second clad layer and removing the unnecessary clad layer. CONSTITUTION:First and second recessed sections 12, 13 in depth d1, d2 are shaped separated at a regular interval to the surface of an insulating GaAs substrate 11. Depth d1, d2 is brought respectively to d1=layer thickness of first clad layer+layer thickness of second clad layer and d2=layer thickness of an active layer. The recessed sections 12, 13 are respectively formed zigzag at regular intervals P on a straight line. A buffer layer 14 composed of insulating GaAs, a multilayer film 15 in which insulating AlAs layers and Al0.03Ga0.97As layers are laminated alternately, the active layer 16 consisting of undoped GaAs, the first clad layer 17 made up of P-type Al0.3Ga0.7As and the second clad layer 18 composed of N-type Al0.3Ga0.7As are laminated continuously onto the surface of the substrate 11 in succession. The layer 18 just above the recessed section 13 and the clad layers 17, 18 on the flat section of the surface of the substrate 11 except the recessed sections 12, 13 are removed selectively through etching. |
