| 摘要 |
PURPOSE:To reduce the quantity of spreading to the side of a bump electrode, and to attain fine pitches by attaching a metallic film for intermediate connection onto the whole of one surface of a semiconductor wafer, coating the upper section of the metallic film with a resist film for plating thicker than the bump electrode and forming the bump electrode through an opening section for plating. CONSTITUTION:An intermediate metallic film 6 is shaped onto the whole top face of a semiconductor wafer 1, a photoresist film 7 is formed in specified thickness (approximately 30mum) thicker than the thickness of a bump electrode 8, and an opening section 7a for plating is shaped where corresponding to an electrode 4 for connection. Such a wafer 1 is placed onto a head ring 20 while the photoresist film 7 is directed downward in a plating device 10, cathode pins 18 are connected to the intermediate metallic film 6, and a plating solution 16 is jetted into a jet chamber 17. The execution of plating to the intermediate metallic film 6 exposed from the opening section is prevented by plating-solution interrupting walls 21, 21 in the head ring 20 at that time. |
