| 摘要 |
PURPOSE:To thin a metallic wiring, and to flatten an element surface by making an insulating film of a multilayer and forming a stepped section into a plurality of steps in a field plate structure and reducing stepped quantity per one step. CONSTITUTION:A P-type impurity diffusion layer 12 and a hot SiO2 film 13 while covering a junction section on the main surface of the P-N junction are formed on the main surface of an N-type single crystal Si substrate 11. A stepped section A is shaped by a CVD-SiO2 film 14 formed onto the hot SiO2 film 13 while being slightly separated from the upper section of the P-N junction section. A stopped section B is shaped onto the SiO2 film 14 and near the stepped section A by an intermediate insulating film 15 used for multilayer interconnections, etc. A metallic wiring 16 from an exposed section, from which the hot SiO2 film 13 is bored, in the P-type impurity diffusion layer 12 passes on the hot SiO2 film 13 and coats the stepped section A, passes on the SiO2 film 14 and coats the stepped section B, and is led out onto the intermediate insulating film 13, thus organizing MOS structure. That is, since a stepped section corresponding to a conventional one stepped section is composed of two steps of A and B, stepped quantity is reduced, and flattened. Accordingly, even when film thickness is thinned in the metallic wiring 16, the wiring 16 is not disconnected at the stepped section A and said stepped section B. |
