| 摘要 |
<p>PURPOSE:To prevent a source bus line from being broken by branching a source line into plural lines at the intersection part of gate and source lines of a thin film transistor(TR) array formed in a matrix on an insulating substrate, interposing an insulator or laminate of an insulator and a semiconductor and forming respective layers separately in an island shape. CONSTITUTION:A by-pass line 2 is formed in parallel to the gate bus line 1 and connected through a through hole 3 of an inter-layer insulating film to form two-layered structure. No by-pass line is provided at a part 4 of intersection with the source bus line. A by-pass line 6 is formed at the intersection part 4 separately from the source bus line 5 to form the laminate structure of a conductor thin film through the inter-layer insulating film and through hole 9. At the intersection part, an a-Si(n<+>)/a-Si(i) layer 7 and an etching stopper SiNx layer 8 are separated in an island shape to reduce the possibility of the breaking of the source bus line due to the separation of the layers 7 and 8. This constitution improves the picture quality of the active matrix display device.</p> |
